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IXGH30N120C3H1 - High speed PT IGBTs

Key Features

  • z Optimized for Low Conduction and Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z Avalanche Rated z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

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Preliminary Technical Information GenX3TM 1200V IGBT IXGH30N120C3H1 High speed PT IGBTs for 10-50kHz Switching VCES IC100 VCE(sat) tfi(typ) = 1200V = 24A ≤ 4.2V = 42ns Symbol VCES VCGR VGES VGEM IC25 IC100 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Mounting Torque Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Maximum Ratings 1200 1200 V V ±20 V ±30 V 48 A 24 A 115 A 20 A 250 mJ ICM = 60 @VCE ≤ 1200 250 A V W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in.